| Part Number | TN3725A |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Switching Transistor |
| Description | TN3725A / MMPQ3725 Discrete POWER & Signal Technologies TN3725A MMPQ3725 E B E B E B E B C TO-226 BE SOIC-16 C C C C C C C C NPN ... |
| Features |
ted
Characteristic
Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die TN3725A 1.0 8.0 50 125
Max
MMPQ3725 1.0 8.0
Units
W mW/ °C °C/W °C/W °C/W °C/W
125 240
© 1997 Fairchild Semiconductor Corporation
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| File Size | 181.16KB |
| Datasheet |
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TN3725 : TN3725A / MMPQ3725 Discrete POWER & Signal Technologies TN3725A MMPQ3725 E B E B E B E B C TO-226 BE SOIC-16 C C C C C C C C NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.0 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be .
TN3725 : TN3725A / MMPQ3725 Discrete POWER & Signal Technologies TN3725A MMPQ3725 E B E B E B E B C TO-226 BE SOIC-16 C C C C C C C C NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.0 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be .
TN3725 : TN3725A / MMPQ3725 Discrete POWER & Signal Technologies TN3725A MMPQ3725 E B E B E B E B C TO-226 BE SOIC-16 C C C C C C C C NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.0 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be .
TN3725A : TN3725A / MMPQ3725 Discrete POWER & Signal Technologies TN3725A MMPQ3725 E B E B E B E B C TO-226 BE SOIC-16 C C C C C C C C NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.0 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be .
TN3725A : TN3725A / MMPQ3725 Discrete POWER & Signal Technologies TN3725A MMPQ3725 E B E B E B E B C TO-226 BE SOIC-16 C C C C C C C C NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.0 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be .