| Part Number | TPCF8102 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon P-Channel MOSFET |
| Description | TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Portable Equipment Applications... |
| Features |
TOSHIBA
2-3U1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. ...
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| File Size | 224.56KB |
| Datasheet |
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TPCF8101 : www.DataSheet4U.com TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −12 V) Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −12 −12 ±8 −6 −24 2.5 0.7 6.3 −3 0.25 150 −55~150 Unit .
TPCF8103 : www.DataSheet4U.com TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7S (typ.) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating -.
TPCF8104 : www.DataSheet4U.com TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCF8104 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −30 −3.
TPCF8105 : TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8105 1. Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Si.
TPCF8107 : TPCF8107 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8107 1. Applications • • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power .
TPCF8108 : TPCF8108 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8108 1. Applications • • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 21 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power.