BU1507

BU1506 : Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time COND.

BU1506 : www.vishay.com BU1506, BU1508, BU1510 Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers + ~~ isoCink+™ Case Style BU - ~~+ +~~ - LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF at IF = 7.5 A TJ max. Package 15 A 600 V, 800 V, 1000 V 200 A 5 μA 0.87 V 150 °C BU Circuit configurations In-line FEATURES • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S) Available • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definition.

BU1506-E3 : www.vishay.com BU1506-E3, BU1508-E3, BU1510-E3 Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers + ~~ isoCink+™ Case Style BU - ~~+ +~~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. PRIMARY CHARACTERISTICS Package BU IF(AV) VRRM IFSM IR VF at IF = 7.5 A TJ max. Diode variations 15 A 600 V, 800 V, 1000 V 200 A 5 μA 0.87 V 150 °C In-Line FEATURES • UL recognition file number E309391 (QQQX2) UL 1557 (see *) • Thin single in-line package • Available for BU-5S lead forming.

BU1506-M3 : www.vishay.com BU1506-M3, BU1508-M3, BU1510-M3 Vishay General Semiconductor Enhanced isoCink+TM Bridge Rectifiers + ~~ - isoCink+™ Case Style BU - ~~+ FEATURES • UL recognition file number E309391 (QQQX2) UL 1557 (see *) • Thin single in-line package • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 +~~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150.

BU1506DF : ·High Voltage ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Base Voltage VBE= 0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 32 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARA.

BU1506DX : Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time COND.

BU1506DX : ·With TO-220F package ·High voltage ·High speed switching ·Built-in damper diode. APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7.5 5 8 3 8 32 150 -40~150 UNIT V V V A A A A W SavantIC Semiconductor .

BU1506DX : ·High Voltage ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Base Voltage VBE= 0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 32 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARA.

BU1507 : Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector-emitter saturation voltage Collector saturation current Fall .

BU1507AX : Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector-emitter saturation voltage Collector saturation current Fall .

BU1507AX : ·With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers and computer monitors. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (peak) Base current Base current (peak) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7.5 8 15 4 6 45 150 -65~150 UNIT V V V A A A A W SavantIC Semicondu.

BU1507AX : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and computer monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCESM Collector-Emitter Voltage VBE= 0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 4 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 A 45 W 150 ℃ Tstg .

BU1507DX : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and computer monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCESM Collector-Emitter Voltage VBE= 0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 4 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 .

BU1507DX : Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward .

BU1508 : www.vishay.com BU1506, BU1508, BU1510 Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers + ~~ isoCink+™ Case Style BU - ~~+ +~~ - LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF at IF = 7.5 A TJ max. Package 15 A 600 V, 800 V, 1000 V 200 A 5 μA 0.87 V 150 °C BU Circuit configurations In-line FEATURES • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S) Available • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definition.

BU1508-E3 : www.vishay.com BU1506-E3, BU1508-E3, BU1510-E3 Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers + ~~ isoCink+™ Case Style BU - ~~+ +~~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. PRIMARY CHARACTERISTICS Package BU IF(AV) VRRM IFSM IR VF at IF = 7.5 A TJ max. Diode variations 15 A 600 V, 800 V, 1000 V 200 A 5 μA 0.87 V 150 °C In-Line FEATURES • UL recognition file number E309391 (QQQX2) UL 1557 (see *) • Thin single in-line package • Available for BU-5S lead forming.