| Part Number | BUF420A |
| Manufacturer | ST Microelectronics |
| Title | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Description | The BUF420A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It use a Cel... |
| Features |
p 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature
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Value 1000 450 7 30 60 6 9 200 -65 to 150 150
Uni t V V V A A A A W
o o
C C
June 2000
1/6
BUF420A
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-Case Max 0.63
o
C/W
ELECTRICAL CHARACT...
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| File Size | 57.49KB |
| Datasheet |
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BUF420 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 60 A IB Base Current-Continuous 6 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 9 A 200 W .
BUF420 : The BUF420 and BUF420M are manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. 1 2 TO-3 (version ”R”) TO-218 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RATINGS Symb ol V CEV V CEO VEBO IC I CM IB I BM P tot T s tg Tj July 1997 Parameter Collector-Emitter Voltage (VBE = -1.5 V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector .
BUF420A : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 60 A IB Base Current-Continuous 6 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 9 A 200 W .
BUF420AW : The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p 5 ms) Base Current Base Peak Current (t p 5 ms) Total.
BUF420I : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 60 A IB Base Current-Continuous 6 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 9 A 115 W .
BUF420M : The BUF420M is manufactured using High leVoltage Multi Epitaxial Planar technology for high soswitching speeds and high voltage capacity. It buses a Cellular Emitter structure with planar edge Otermination to enhance switching speeds while -maintaining a wide RBSOA. )The BUF series is designed for use in t(shigh-frequency power supplies and motor control capplications. 1 2 TO-3 (version "R") INTERNAL SCHEMATIC DIAGRAM Obsolete ProduABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collector-Emitter Voltage (VBE = -1.5V) 850 V VCEO Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0) 7V IC Collector Current 30 A ICM Collect.
BUF420M : ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Peak Collector Current 60 A IB Base Current 6 A PC Collector Power Dissipation 200 W TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature -65~150 ℃ T.