| Part Number | HYM72V1600GS-50- |
| Manufacturer | Siemens |
| Title | 16M x 72-Bit Dynamic RAM Module |
| Description | 3.3V 50ns DRAM module 3.3V 60ns DRAM module 3.3V 50ns DRAM module 3.3V 60ns DRAM module Note: 1 = High Level ( Driver Output) , 0 = Low Level (D... |
| Features |
mponents (4 mm thickness) HYM 72V1610GS with SOJ-components (9 mm thickness) 8192 refresh cycles / 128 ms with 13 / 11 addressing Gold contact pad double sided module with 38.1 mm (1500 mil) height
• • • Semiconductor Group 1 11.95 16M × 72-Bit Dynamic RAM Module (ECC - Module ) HYM 72V1600GS-... |
| File Size | 77.52KB |
| Datasheet |
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HYM72V1600GS-50 : 3.3V 50ns DRAM module 3.3V 60ns DRAM module 3.3V 50ns DRAM module 3.3V 60ns DRAM module Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) . For PDE at a high level all PD terminal are in tri-state. Semiconductor Group 2 HYM72V1600/10GS-50/-60 16M x 72-ECC Module The HYM 72V1600/10GS-50/-60 is a 128 MByte DRAM module organized as 16 777 216 words by 72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 3164400BT/BJ 16M × 4 DRAMs in 500 mil wide TSOPII or SOJ- packages mounted together with eighteen 0.2 µF ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using four BiCMOS 8-.