| Part Number | PHN203 |
| Manufacturer | NXP |
| Title | Dual N-channel enhancement mode TrenchMOS transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resista... |
| Features |
• Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package PHN203 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS = 25 V ID = 6.3 A RDS(ON) ≤ 30 mΩ (VGS = 10 V) RDS(ON) ≤ 55 mΩ (VGS = 4.5 V) s1 g1 s2 g2 GENERAL DESCRIPTION N-channel enhancement mode field... |
| File Size | 98.60KB |
| Datasheet |
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PHN205 : Two N-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 1 4 s1 g 1 handbook, halfpage PHN205 PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL s1 g1 s2 g2 d2 d2 d1 d1 DESCRIPTION source 1 gate 1 source 2 gate 2 drain 2 drain 2 drain 1 drain 1 d1 d1 5 d2 d2 8 MAM117 s2 g 2 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL Per N-channel VDS VSD VGS VGSth ID RDSon Ptot drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage dra.