High output power P1dB=6W (TYP.) @f=5.9
– 6.4GHz
High power gain GLP=10dB (TYP.) @f=5.9
– 6.4GHz
High power added efficiency P.A.E.=32% (TYP.) @f=5.9
– 6.4GHz
Low distortion [ item -51] I...
MGFC38V5964 PDF File
| Part Number | MGFC38V5964 |
| Manufacturer | Mitsubishi |
| Title | C band internally matched power GaAs FET |
| Description | The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically s... |
| Features |
Class A operation Internally matched to 50(ohm) system High output power P1dB=6W (TYP.) @f=5.9 – 6.4GHz High power gain GLP=10dB (TYP.) @f=5.9 – 6.4GHz High power added efficiency P.A.E.=32% (TYP.) @f=5.9 – 6.4GHz Low distortion [ item -51] I... |
| Published | Apr 29, 2005 |
| Datasheet |
MGFC38V5964 PDF File
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