High output power P1dB=8W (TYP.) @f=5.9
– 6.4GHz
High power gain GLP=10.5dB (TYP.) @f=5.9
– 6.4GHz
High power added efficiency P.A.E.=30% (TYP.) @f=5.9
– 6.4GHz
Low distortion [item -51] ...
MGFC39V5964A PDF File
| Part Number | MGFC39V5964A |
| Manufacturer | Mitsubishi |
| Title | C band internally matched power GaAs FET |
| Description | The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically ... |
| Features |
Class A operation Internally matched to 50(ohm) system High output power P1dB=8W (TYP.) @f=5.9 – 6.4GHz High power gain GLP=10.5dB (TYP.) @f=5.9 – 6.4GHz High power added efficiency P.A.E.=30% (TYP.) @f=5.9 – 6.4GHz Low distortion [item -51] ... |
| Published | Apr 29, 2005 |
| Datasheet |
MGFC39V5964A PDF File
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