High output power P1dB=2.0W (TYP.) @f=14.0
– 14.5GHz
High linear power gain GLP=7.0dB (TYP.) @f=14.0
– 14.5GHz
High power added efficiency P.A.E.=22% (TYP.) @f=14.0
– 14.5GHz APPLICATION
...
MGFK33V4045 PDF File
| Part Number | MGFK33V4045 |
| Manufacturer | Mitsubishi |
| Title | power GaAs FET |
| Description | The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically... |
| Features |
Internally matched to 50(ohm) system Flip-chip mounted High output power P1dB=2.0W (TYP.) @f=14.0 – 14.5GHz High linear power gain GLP=7.0dB (TYP.) @f=14.0 – 14.5GHz High power added efficiency P.A.E.=22% (TYP.) @f=14.0 – 14.5GHz APPLICATION ... |
| Published | Apr 29, 2005 |
| Datasheet |
MGFK33V4045 PDF File
|
