• HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A
• CURVES TO 100A (Pulsed)
• DIODE PROTECTION TO RATED IC
• MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE
– EMITTER SHUNT RESISTOR 4.1 (0....
MJ11031 PDF File
| Part Number | MJ11031 |
| Manufacturer | Seme LAB |
| Title | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
| Description | NPN PNP MJ11029 MJ11031 MJ11033 LAB MECHANICAL DATA Dimensions in mm (inches) 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) SEME MJ11028 MJ11030 MJ110... |
| Features |
30 .15 (1.187 )
1
1 6 .89 (0.665)
2
• HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR 4.1 (0.... |
| Published | May 7, 2005 |
| Datasheet |
MJ11031 PDF File
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MJ11030
MJ11030
MJ11030
MJ11030
MJ11030
MJ11031
MJ11031
MJ11031