–Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built
–In Base
–Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°...
NTE251 PDF File
| Part Number | NTE251 |
| Manufacturer | NTE |
| Title | Silicon Complementary Transistors |
| Description | The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and ... |
| Features |
D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector –Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built –In Base –Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°... |
| Published | May 9, 2005 |
| Datasheet |
NTE251 PDF File
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