PMST5551

PMST5550 : NPN high-voltage transistor in a SOT323 plastic package. PNP complement: PMST5401. PINNING PIN 1 2 3 PMST5550; PMST5551 DESCRIPTION base emitter collector handbook, halfpage 3 3 1 MARKING TYPE NUMBER PMST5550 PMST5551 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. MARKING CODE(1) ∗1F ∗G3 2 1 Top view 2 MAM062 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST5550 PMST5551 VCEO collector-emitter voltage PMST5550 PMST5551 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector curr.

PMST5551-Q : NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low current (max. 300 mA) • High voltage (max. 160 V) • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Switching and amplification in high voltage applications such as telephony 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current hFE DC current gain Conditions open base VCE = 5 V; IC = 1 mA; Tamb = 25 °C Min Typ Max Unit - - 160 V - - 80 - 300 mA - 5. Pinning information Table 2. Pinning information Pin Symbol Des.