| Part Number | PRFS-1006-0005 |
| Manufacturer | ANADIGICS |
| Title | 3.4-3.6 GHz Power Amplifier |
| Description | The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequenc... |
| Features |
• 31 dBm P1dB • 21 dB gain GND RF OUT VG1 RF OUT GND RF OUT N/C GND 7 N/C INDEX AREA 8 N/C 9 GND 4.00 10 VG2 11 GND 4.00 12 VG3 1.00 0.80 4 0.45 0.35 0.275 0.225 Pin 1 Functional Block Diagram 24 1 1 ALL DIMENSIONS ARE IN MILLIMETERS, ANGLES IN DEGREES. 2 THE TERMINAL #1 IDENTIFIER ... |
| File Size | 71.40KB |
| Datasheet |
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PRFS-1006-0006 : The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless applications requiring high transmit linearity. The input and output of the PA can be easily matched for optimum linearity and power performance from 3.4 to 3.6 GHz. GND 24 GND GND GND VD2 23 VD1 22 21 20 19 GND 1 2 3 4 5 6 Interstage Match Interstage Match Input Match 18 17 16 15 14 13 N/C RF IN GND Product Features • 31 dBm P1dB • 21 dB gain GND RF OUT VG1 RF OUT GND RF OUT N/C GND 7 N/C INDEX AREA 8 N/C 9 GND 4.00 10 VG2 11 GND .
PRFS-1006-0007 : The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless applications requiring high transmit linearity. The input and output of the PA can be easily matched for optimum linearity and power performance from 3.4 to 3.6 GHz. GND 24 GND GND GND VD2 23 VD1 22 21 20 19 GND 1 2 3 4 5 6 Interstage Match Interstage Match Input Match 18 17 16 15 14 13 N/C RF IN GND Product Features • 31 dBm P1dB • 21 dB gain GND RF OUT VG1 RF OUT GND RF OUT N/C GND 7 N/C INDEX AREA 8 N/C 9 GND 4.00 10 VG2 11 GND .
PRFS-1006-0008 : The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless applications requiring high transmit linearity. The input and output of the PA can be easily matched for optimum linearity and power performance from 3.4 to 3.6 GHz. GND 24 GND GND GND VD2 23 VD1 22 21 20 19 GND 1 2 3 4 5 6 Interstage Match Interstage Match Input Match 18 17 16 15 14 13 N/C RF IN GND Product Features • 31 dBm P1dB • 21 dB gain GND RF OUT VG1 RF OUT GND RF OUT N/C GND 7 N/C INDEX AREA 8 N/C 9 GND 4.00 10 VG2 11 GND .
PRFS-1006-0009 : The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless applications requiring high transmit linearity. The input and output of the PA can be easily matched for optimum linearity and power performance from 3.4 to 3.6 GHz. GND 24 GND GND GND VD2 23 VD1 22 21 20 19 GND 1 2 3 4 5 6 Interstage Match Interstage Match Input Match 18 17 16 15 14 13 N/C RF IN GND Product Features • 31 dBm P1dB • 21 dB gain GND RF OUT VG1 RF OUT GND RF OUT N/C GND 7 N/C INDEX AREA 8 N/C 9 GND 4.00 10 VG2 11 GND .