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MC33151


Part Number MC33151
Manufacturer Motorola
Title HIGH SPEED DUAL MOSFET DRIVERS
Description The MC34151 is a dual inverting high speed driver specifically designed to interface low current digital circuitry with power MOSFETs. This device...
Features low input current making them CMOS and LSTTL logic compatible, input hysteresis for fast output switching that is independent of input transition time, and two high current totem pole outputs ideally suited for driving power MOSFETs. Also included is an undervoltage lockout with hysteresis to preven...

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MC33151 : Output Stage The MC34151 is a dual inverting high speed driver specifically designed to interface low current digital circuitry with power MOSFETs. This device is constructed with Schottky clamped Bipolar Analog technology which offers a high degree of performance and ruggedness in hostile industrial environments. Input Stage The Logic Inputs have 170 mV of hysteresis with the input threshold centered at 1.67 V. The input thresholds are insensitive to VCC making this device directly compatible with CMOS and LSTTL logic families over its entire operating voltage range. Input hysteresis provides fast output switching that is independent of the input signal transition time, preventing output .

MC33152 : The MC34152 is a dual noninverting high speed driver specifically designed to interface low current digital circuitry with power MOSFETs. This device is constructed with Schottky clamped Bipolar Analog technology which offers a high degree of performance and ruggedness in hostile industrial environments. Input Stage The Logic Inputs have 170 mV of hysteresis with the input threshold centered at 1.67 V. The input thresholds are insensitive to VCC making this device directly compatible with CMOS and LSTTL logic families over its entire operating voltage range. Input hysteresis provides fast output switching that is independent of the input signal transition time, preventing output oscillations.

MC33152 : MC34152, MC33152, NCV33152 High Speed Dual MOSFET Drivers The MC34152/MC33152 are dual noninverting high speed drivers specifically designed for applications that require low current digital signals to drive large capacitive loads with high slew rates. These devices feature low input current making them CMOS/LSTTL logic compatible, input hysteresis for fast output switching that is independent of input transition time, and two high current totem pole outputs ideally suited for driving power MOSFETs. Also included is an undervoltage lockout with hysteresis to prevent system erratic operation at low supply voltages. Typical applications include switching power supplies, dc−to−dc converters, .

MC33153 : .

MC33153 : MC33153 Single IGBT Gate Driver The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual−in−line and surface mount packages. Features • High Current Output Stage: 1.0 A Source/2.0 A Sink • Protection Circuits for Both Conventional and Sense IGBTs • Programmable Faul.

MC33153D : GATE DRIVE Controlling Switching Times The most important design aspect of an IGBT gate drive is optimization of the switching characteristics, the switching characteristics are especially important in motor control applications in which PWM transistors are used in a bridge configuration. In these applications, the gate drive circuit components should be selected to optimize turn-on, turn-off and off-state impedance. A single resistor may be used to control both turn –on and turn-off as shown in Figure 30. However, the resistor value selected must be a compromise in turn-on abruptness and turn-off losses. Using a single resistor is normally suitable only for very low frequency PWM. An optimi.

MC33153P : GATE DRIVE Controlling Switching Times The most important design aspect of an IGBT gate drive is optimization of the switching characteristics, the switching characteristics are especially important in motor control applications in which PWM transistors are used in a bridge configuration. In these applications, the gate drive circuit components should be selected to optimize turn-on, turn-off and off-state impedance. A single resistor may be used to control both turn –on and turn-off as shown in Figure 30. However, the resistor value selected must be a compromise in turn-on abruptness and turn-off losses. Using a single resistor is normally suitable only for very low frequency PWM. An optimi.

MC33154 : Order this document by MC33154/D Advance Information Single IGBT High Current Gate Driver The MC33154 is specifically designed as an IGBT driver for high powered applications including ac induction motor control, brushless dc motor control, and uninterruptable power supplies. This device also offers a cost effective solution for driving power MOSFETS and Bipolar transistors. Device protections include the choice of desaturation or overcurrent sensing and an undervoltage lockout to provide assurance of proper gate drive voltage. These devices are available in dual–in–line and surface mount packages and include the following features: MC33154 SINGLE IGBT HIGH CURRENT GATE DRIVER SEMICONDUCTO.

MC33157 : MC33157 Half Bridge Controller and Driver for Industrial Linear Tubes The MC33157 includes the oscillator circuit and two output channels to control a half–bridge power stage. One of the channels is ground–referenced. The second one is floating to provide a bootstrap operation for the high side switch. Dedicated Driver for Industrial Linear Tubes http://onsemi.com • Main oscillator is current controlled, making it easy to set up by a • • single external resistor. On top of that, such a feature is useful to implement a dimming function by frequency shift. Filament pre–heating time control built–in. The strike sequence is controllable by external passive components, the resonnant frequency be.




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