| Part Number | MRF6404 |
| Manufacturer | Motorola |
| Title | RF POWER TRANSISTOR |
| Description | MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6404/D NPN Silicon RF Power Transistor The MRF6404 is designed for ... |
| Features |
Value 24 60 4 10 125 0.71 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Max 1.4 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector... |
| File Size | 276.93KB |
| Datasheet |
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MRF6401 : MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6401/D NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applications. • Specified 20 Volts, 1.66 GHz Characteristics: Output Power — 0.5 Watts Gain — 10 dB Min Class A Operation • Specified 20 Volts, 1.88 GHz Characteristics: Output Power — 0.5 Watts Gain — 9.0 dB Min Class A Operation • Circuit Board Photomaster Available by Ordering Document MRF6401PHT/D from Motorola Literature Distribution. MRF64.
MRF6402 : MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6402/D NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has an internally matched input. • To be used in Class AB for PCN and Cellular Radio Applications • Specified 26 V, 1.88 GHz Characteristics Output Power — 4.5 Watts Gain — 10 dB Typ Efficiency — 45% Typ • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF640.
MRF6408 : MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6408/D NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. • To be used in class AB for PCN–PCS / Cellular Radio • Specified 26 Volts, 1.88 GHz Characteristics Output Power = 12 Watts CW Typical Gain = 8.8 dB Typical Efficiency = 42% • Specified 26 Volts, 1.99 GHz Characteristics Output Power = 12 Watts CW Typical Gain = 8.3 dB Typical Efficiency = 39% • Circuit Board Photomaster Available by Ordering Document MRF6408PHT/D from Motorola Literatur.
MRF6409 : MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6409/D NPN Silicon RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. • To be used in Class AB • Specified 26 Volts, 960 MHz Characteristics Output Power — 20 Watts CW Gain — 11 dB Typ Efficiency — 60% Typ MRF6409 20 W, 960 MHz RF POWER TRANSISTOR NPN SILICON CASE 319–07, STYLE 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 2.