| Part Number | MTB2N60E |
| Manufacturer | Motorola |
| Title | TMOS POWER FET |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N60E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount... |
| Features |
e Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source ... |
| File Size | 271.17KB |
| Datasheet |
|
MTB2N60E : MTB2N60E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diod.