| Part Number | MTB23P06V |
| Manufacturer | Motorola |
| Title | TMOS POWER FET |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB23P06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount ... |
| Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors ™ Data Sheet V™ MTB23P06V Motorola Preferred Device P –Channel Enhancement –Mode Silicon Gate TMOS POWER FET 23 AMPERES 60 VOLTS RD... |
| File Size | 249.11KB |
| Datasheet |
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MTB23P06E : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB23P06E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB23P06E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltag.
MTB23P06V : MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (R.