STK7561G

STK7561 : .

STK7561A : of Operation of Internal Blocks [OSC] External excitation type OSC circuit where the CMOS NAND gate-used ring OSC is formed by the 2-stage NAND circuit, delivering basic pulses. This circuit provides pulse width modulation where the frequency is constant and the duty only varies. [PWM] Pulse width modulation (PWM) is provided by differentiating the output of NAND gate 2 using the differentiating circuit of time constant CR as shown left and by applying the result to the input of NAND gate 3. The threshold voltage at the input of NAND gate 3.

STK7561F : of Operation of Internal Blocks [OSC] External excitation type OSC circuit where the CMOS NAND gate-used ring OSC is formed by the 2-stage NAND circuit, delivering basic pulses. This circuit provides pulse width modulation where the frequency is constant and the duty only varies. [PWM] Pulse width modulation (PWM) is provided by differentiating the output of NAND gate 2 using the differentiating circuit of time constant CR as shown left and by applying the result to the input of NAND gate 3. The threshold voltage at the input of NAND gate 3.

STK7561J : .

STK7561L : of Operation of Internal Blocks [OSC] External excitation type OSC circuit where the CMOS NAND gate-used ring OSC is formed by the 2-stage NAND circuit, delivering basic pulses. This circuit provides pulse width modulation where the frequency is constant and the duty only varies. [PWM] Pulse width modulation (PWM) is provided by differentiating the output of NAND gate 2 using the differentiating circuit of time constant CR as shown left and by applying the result to the input of NAND gate 3. The threshold voltage at the input of NAND gate 3.