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IRLMS2002

International Rectifier
Part Number IRLMS2002
Manufacturer International Rectifier
Title HEXFET Power MOSFET
Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon...
Features ntinuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 6.5 5.2 20 2.0 1.3 0.016 ...

Published Oct 19, 2005
Datasheet PDF File IRLMS2002 PDF File


IRLMS2002
IRLMS2002


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