ST1305

ST13001 : ST 13001 NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Total Power Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol VCBO VCEO VEBO IC Ptot Tj TS Symbol hFE hFE ICBO ICEO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) fT tf ts Value 500 400 9 0.3 0.75 150 - 55 to + 150 Min. 5 10 500 400 9 8 Max. 40 100 200 100 0.5 1.2 0.3 1.5 Unit V V V A W O C C Unit µA µA µA V V V V V MHz µs µs O Characteristics at Ta .

ST13003 : Figure 1. Internal schematic diagram C(2) The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. B(3) SC06960r E(1) Table 1. Device summary Part number ST13003 ST13003-K Marking 13003 13003 Package SOT-32 SOT-32 Packaging Tube Bag June 2013 This is information on a product in full production. DocID13533 Rev 5 1/10 www.st.com Free Datasheet http://www.nDatasheet.com Electrical ratings ST13003, ST13003-K 1 Electrical ratings Table 2. Absolute maximum ratings Symbol VCES VCEO .

ST13003 : www.DataSheet4U.com ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Ts Value 600 400 9 1.5 1.5 150 -55 to +150 Unit V V V A W O C C O Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 100 mA Collector Base Breakdown Voltage at IC = 1 mA Collector Emitter Breakdown Voltage.

ST13003-K : Figure 1. Internal schematic diagram C(2) The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. B(3) SC06960r E(1) Table 1. Device summary Part number ST13003 ST13003-K Marking 13003 13003 Package SOT-32 SOT-32 Packaging Tube Bag June 2013 This is information on a product in full production. DocID13533 Rev 5 1/10 www.st.com Free Datasheet http://www.nDatasheet.com Electrical ratings ST13003, ST13003-K 1 Electrical ratings Table 2. Absolute maximum ratings Symbol VCES VCEO .

ST13003D-K : The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications. Figure 1. Internal schematic diagram Table 1. Device summary Marking 13003D Package SOT-32 Packaging cardboard box Order code ST13003D-K November 2007 Rev 1 1/8 www.st.com 8 Electrical ratings www.DataSheet4U.com ST13003D-K 1 Electrical ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (V .

ST13005 : This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Datasheet − production data 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking(1) Package Packaging ST13005 13005 A 13005 C 13005 D 13005 E 13005 F TO-220 Tube 1. Product is pre-selected in DC current gain (group A, C, D, E and F). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales of.

ST13005 : ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation (Ta = 25 OC) Power Dissipation (Tc = 25 OC) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 A at VCE = 5 V, IC = 2 A Collector Base Cutoff Current at VCB = 700 V Emitter Base Cutoff Current at VEB = 9 V Collector Emitter Breakdown Voltage at IC = 10 mA Collector Emitter Saturation Voltage at IC = 1 A, IB = 0.2 A at IC = 2 A, IB = 0.5 A at IC = 4 A, IB = 1 A Base Emitter.

ST13007 : The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST13007 ST13007A ST13007B TO-220 Tube 1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. December 2009 Doc ID 5263 Rev 4 1/11 www.st.com 11 Electrical .

ST13007A : The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST13007 ST13007A ST13007B TO-220 Tube 1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. December 2009 Doc ID 5263 Rev 4 1/11 www.st.com 11 Electrical .

ST13007B : The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST13007 ST13007A ST13007B TO-220 Tube 1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. December 2009 Doc ID 5263 Rev 4 1/11 www.st.com 11 Electrical .

ST13007D : The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature April 2003 Value 700 400 9 8 16 4 8 80 -65 to 150 150 Unit V V V A A A A W oC oC 1/7 ST13007D THERMAL.

ST13007DFP : The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ABSOLUTE MAXIMUM RATINGS Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Visol Tstg Tj Parameter Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current.

ST13007N : The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. 1 2 3 1 2 3 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter ST13007N Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 C Storage T emperature Max. O perating Junction Temperature o Value ST13007NF P 700 400 9 8 16 4 8 80 -65 to 150 150 33 Uni t .

ST13007NFP : The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. 1 2 3 1 2 3 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter ST13007N Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 C Storage T emperature Max. O perating Junction Temperature o Value ST13007NF P 700 400 9 8 16 4 8 80 -65 to 150 150 33 Uni t .

ST13009 : The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds. 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. June 2009 Doc ID 11491 Rev 3 1/11 www.st.com 11 Contents Contents ST13009 1 Electri.

ST1305B : The ST1305B is a 192-bit EEPROM device with associated security logic to control memory access. The circuit includes counting capabilities and thus is very well adapted to prepaid card applications. The ST1305B is protected by hard-wired security logic and special fuses. The memory is arranged as a matrix of 24x8 cells, accessed in a serial bit- Figure 1. Logic Diagram VCC RST ST1305B I/O Table 1. Signal Names CLK RST I/O VCC GND Clock Reset Serial Data Input/Output Supply Voltage Ground CLK GND DS05B01 October 1999 Complete data available under NDA. 1/2 ST1305B wise fashion for reading and programming, and in a byte-wise fashion for internal erasing. The device recognises three comm.