| Part Number | ST13007N |
| Manufacturer | ST Microelectronics |
| Title | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| Description | The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a ... |
| Features |
16 4 8 80 -65 to 150 150 33
Uni t V V V A A A A W
o o
C C
March 1999
1/7
ST13007N / ST13007NFP
THERMAL DATA
T O- 220 R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-Ambient Max Max 1.56 62.5 T O-220F P 3.8 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcas...
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| File Size | 75.47KB |
| Datasheet |
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ST13007 : The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST13007 ST13007A ST13007B TO-220 Tube 1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. December 2009 Doc ID 5263 Rev 4 1/11 www.st.com 11 Electrical .
ST13007A : The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST13007 ST13007A ST13007B TO-220 Tube 1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. December 2009 Doc ID 5263 Rev 4 1/11 www.st.com 11 Electrical .
ST13007B : The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST13007 ST13007A ST13007B TO-220 Tube 1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. December 2009 Doc ID 5263 Rev 4 1/11 www.st.com 11 Electrical .
ST13007D : The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature April 2003 Value 700 400 9 8 16 4 8 80 -65 to 150 150 Unit V V V A A A A W oC oC 1/7 ST13007D THERMAL.
ST13007DFP : The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ABSOLUTE MAXIMUM RATINGS Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Visol Tstg Tj Parameter Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current.
ST13007NFP : The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. 1 2 3 1 2 3 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter ST13007N Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 C Storage T emperature Max. O perating Junction Temperature o Value ST13007NF P 700 400 9 8 16 4 8 80 -65 to 150 150 33 Uni t .