| Part Number | MTP1306 |
| Manufacturer | Motorola |
| Title | TMOS POWER FET |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1306/D Advance Information HDTMOS E-FET.™ High Density Power FET N–Channel Enh... |
| Features |
E 221A –06 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipa... |
| File Size | 171.45KB |
| Datasheet |
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MTP1302 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1302/D Advance Information HDTMOS E-FET™ High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage .
MTP1302 : MTP1302 Preferred Device Power MOSFET 42 Amps, 30 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode Is .