Part Number | MT58L256L36F |
Manufacturer | Micron Semiconductor |
Title | (MT58Lxxxx) 8Mb SYNCBURST SRAM |
Description | Part Number Example: MT58L256V36FT-10 The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an... |
Features |
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8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F
3.3V VDD, 3.3V or 2.5V I/O, Flow-Through
• Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply (VDD) • Separate +3.3V or +2... |
File Size | 439.62KB |
Datasheet |
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MT58L256L36D : The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 8Mb SyncBurst SRAMs integrate a 512K x 18, 256K x 32, or 256K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK). The synchronous inputs include all addresses, all data inputs, active LOW chip enable (CE#), two additional chip enables for easy depth expansion (CE2, CE2#), burst control inputs (ADSC#, ADSP#, ADV#), byte write enables (BWx#) and global write (GW#). Note that CE2# is not available on the T Versio.
MT58L256L36P : The Micron® SyncBurst™ SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 8Mb SyncBurst SRAMs integrate a 512K x 18, 256K x 32, or 256K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK). The synchronous inputs include all addresses, all data inputs, active LOW chip enable (CE#), two additional chip enables for easy depth expansion (CE2, CE2#), burst control inputs (ADSC#, ADSP#, ADV#), byte write enables (BWx#) and global write Part Number Example: MT58L512L18PT-6 8Mb: 512K x 1.