| Part Number | MT58L512V18P |
| Manufacturer | Micron Semiconductor |
| Title | (MT58Lxxxx) 8Mb SYNCBURST SRAM |
| Description | The Micron® SyncBurst™ SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 8Mb Syn... |
| Features |
w w w
m o c
8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P
3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect
• Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply (VDD) ... |
| File Size | 416.07KB |
| Datasheet |
|
MT58L512V18F : Part Number Example: MT58L256V36FT-10 The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 8Mb SyncBurst SRAMs integrate a 512K x 18, 256K x 32, or 256K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK). The synchronous inputs include all addresses, all data inputs, active LOW chip enable (CE#), two additional chip enables for easy depth expansion (CE2#, CE2), burst control inputs (ADSC#, ADSP#, ADV#), byte write 8Mb: 512K x 18, 256K x 32/36 Flow-Through Sy.