| Part Number | IXFT26N50 |
| Manufacturer | IXYS Corporation |
| Title | Power MOSFET |
| Description | HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOL... |
| Features |
• International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS = 0 V, ID = 250... |
| File Size | 149.12KB |
| Datasheet |
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IXFT26N50Q : HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q ID25 RDS(on) 0.23 Ω 0.20 Ω 500 V 24 A 500 V 26 A trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 24N50 26N50 24N50 26N50 24N50 26N50 Maximum Ratings 500 500 ± 20 ± 30 24 26 96 104 24 26 30 1.5 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g g TO-247 A.
IXFT26N55Q : Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 26N55Q IXFT 26N55Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 RDS(on) = 550 V = 26 A = 0.23 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 550 V 550 V ±30 V ±40 V 26 A 104 A 26 A 50 mJ 2.0 J 20 V/.