| Part Number | MTP10N10EL |
| Manufacturer | ON Semiconductor |
| Title | Power MOSFET |
| Description | MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 This Power MOSFET is designed to withstand high energy in th... |
| Features |
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Package is Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) ... |
| File Size | 272.76KB |
| Datasheet |
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MTP10N10E : MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10E/D TMOS IV Power Field Effect Transistor This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain–to– source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients. • Internal Source–to–Drain Diode Des.
MTP10N10E : MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers drain−to−source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients. • Internal Source−to−Drain Diode Designed to Replace External Zener Transient Suppressor − Absorbs High Energy in the Ava.
MTP10N10EL : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10EL/D ™ Data Sheet Logic Level TMOS E-FET.™ Power Field Effect Transistor Designer's MTP10N10EL Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer addition.