| Part Number | STB5NC70Z-1 |
| Manufacturer | ST Microelectronics |
| Title | N-CHANNEL POWER MOSFET |
| Description | The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-... |
| Features |
OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta...
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| File Size | 277.84KB |
| Datasheet |
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STB5NC70Z-1 : The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s I²PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (contin.