SI4209

Si4200-G-GM : The Aero® transceiver is a complete RF front end for multi-band GSM and GPRS wireless communications. The transmit section interfaces between the baseband processor and the power amplifier. The receive section interfaces between the RF band-select SAW filters and the baseband processor. No external IF SAW filter or VCO modules are required as all functions are completely implemented on-chip, resulting in a dramatic reduction of board area and component count. Si4201-BM VDD XOUT SDI SCLK SEN 20 19 18 17 16 GND 1 15 SDO RXQP 2 RXQN 3 RXIP 4 14 PDN GND PAD 13 XEN 12 ION RXIN 5 11 IOP 6 7 8 9 10 Si4133T-BM VDD IFLOP VDD IFLON XIN VDD GND RFLOP CKP RFLON CKN GND Functional Block D.

Si4200DB-BM : The Aero® transceiver is a complete RF front end for multi-band GSM and GPRS wireless communications. The transmit section interfaces between the baseband processor and the power amplifier. The receive section interfaces between the RF band-select SAW filters and the baseband processor. No external IF SAW filter or VCO modules are required as all functions are completely implemented on-chip, resulting in a dramatic reduction of board area and component count. Si4201-BM VDD XOUT SDI SCLK SEN 20 19 18 17 16 GND 1 15 SDO RXQP 2 RXQN 3 RXIP 4 14 PDN GND PAD 13 XEN 12 ION RXIN 5 11 IOP 6 7 8 9 10 Si4133T-BM VDD IFLOP VDD IFLON XIN VDD GND RFLOP CKP RFLON CKN GND Functional Block D.

SI4200DY : www.DataSheet.co.kr Si4200DY Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 8a 7.9 Qg (Typ.) 3.6 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter - Game Console - Notebook System Power 8 7 6 5 Top View S1 S2 N-Channel MOSFET D1 D1 D2 D2 G1 G2 D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Ordering Information: Si4200DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC .

Si4201-BM : The Aero® transceiver is a complete RF front end for multi-band GSM and GPRS wireless communications. The transmit section interfaces between the baseband processor and the power amplifier. The receive section interfaces between the RF band-select SAW filters and the baseband processor. No external IF SAW filter or VCO modules are required as all functions are completely implemented on-chip, resulting in a dramatic reduction of board area and component count. Si4201-BM VDD XOUT SDI SCLK SEN 20 19 18 17 16 GND 1 15 SDO RXQP 2 RXQN 3 RXIP 4 14 PDN GND PAD 13 XEN 12 ION RXIN 5 11 IOP 6 7 8 9 10 Si4133T-BM VDD IFLOP VDD IFLON XIN VDD GND RFLOP CKP RFLON CKN GND Functional Block D.

SI4202DY : Dual N-Channel 30 V (D-S) MOSFET Si4202DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.014 at VGS = 10 V 30 0.017 at VGS = 4.5 V ID (A) 12.1 11 Qg (Typ.) 5.4 nC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Synchronous Buck - Notebooks D1 D2 - Servers - STB G1 G2 Top View Ordering Information: Si4202DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Volt.

SI4204DY : Dual N-Channel 20 V MOSFET Si4204DY Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0046 at VGS = 10 V 0.006 at VGS = 4.5 V ID (A) 19.8a 17.3a Qg (Typ.) 14.5 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS D1 D2 • DC/DC Converter • Fixed Telecom • Notebook PC G1 G2 Top View Ordering Information: Si4204DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Cont.

ST2-DC12V-F : 1a1b/2a 8A ST ST RELAYS FEATURES 1. Even with small form factor, sensitive enough for direct ICdriving The dimensions of this high-density 4-gap balanced armature are 31 mm  14 mm  11 mm 1.220 inch  .551 inch  .433 inch. Despite this small size, high sensitivity is achieved by a mechanism that incorporates highefficiency polarized magnetic circuits along with our exclusive spring alignment method. With an minimum operating power of about 150 mW, nominal operating power of 240 mW, this relay can be directly driven by transistor or chip controllers. 2. High switching capability Strong against lamp inductive loads, maximum switching capacity has reached 3,040 VA (8A 380V AC). 3. High bre.

ST2-DC9V-F : 1a1b/2a 8A ST ST RELAYS FEATURES 1. Even with small form factor, sensitive enough for direct ICdriving The dimensions of this high-density 4-gap balanced armature are 31 mm  14 mm  11 mm 1.220 inch  .551 inch  .433 inch. Despite this small size, high sensitivity is achieved by a mechanism that incorporates highefficiency polarized magnetic circuits along with our exclusive spring alignment method. With an minimum operating power of about 150 mW, nominal operating power of 240 mW, this relay can be directly driven by transistor or chip controllers. 2. High switching capability Strong against lamp inductive loads, maximum switching capacity has reached 3,040 VA (8A 380V AC). 3. High bre.

ST2-DC6V-F : 1a1b/2a 8A ST ST RELAYS FEATURES 1. Even with small form factor, sensitive enough for direct ICdriving The dimensions of this high-density 4-gap balanced armature are 31 mm  14 mm  11 mm 1.220 inch  .551 inch  .433 inch. Despite this small size, high sensitivity is achieved by a mechanism that incorporates highefficiency polarized magnetic circuits along with our exclusive spring alignment method. With an minimum operating power of about 150 mW, nominal operating power of 240 mW, this relay can be directly driven by transistor or chip controllers. 2. High switching capability Strong against lamp inductive loads, maximum switching capacity has reached 3,040 VA (8A 380V AC). 3. High bre.

ST2-DC5V-F : 1a1b/2a 8A ST ST RELAYS FEATURES 1. Even with small form factor, sensitive enough for direct ICdriving The dimensions of this high-density 4-gap balanced armature are 31 mm  14 mm  11 mm 1.220 inch  .551 inch  .433 inch. Despite this small size, high sensitivity is achieved by a mechanism that incorporates highefficiency polarized magnetic circuits along with our exclusive spring alignment method. With an minimum operating power of about 150 mW, nominal operating power of 240 mW, this relay can be directly driven by transistor or chip controllers. 2. High switching capability Strong against lamp inductive loads, maximum switching capacity has reached 3,040 VA (8A 380V AC). 3. High bre.

ST2-DC3V-F : 1a1b/2a 8A ST ST RELAYS FEATURES 1. Even with small form factor, sensitive enough for direct ICdriving The dimensions of this high-density 4-gap balanced armature are 31 mm  14 mm  11 mm 1.220 inch  .551 inch  .433 inch. Despite this small size, high sensitivity is achieved by a mechanism that incorporates highefficiency polarized magnetic circuits along with our exclusive spring alignment method. With an minimum operating power of about 150 mW, nominal operating power of 240 mW, this relay can be directly driven by transistor or chip controllers. 2. High switching capability Strong against lamp inductive loads, maximum switching capacity has reached 3,040 VA (8A 380V AC). 3. High bre.

ST1-DC48V-F : 1a1b/2a 8A ST ST RELAYS FEATURES 1. Even with small form factor, sensitive enough for direct ICdriving The dimensions of this high-density 4-gap balanced armature are 31 mm  14 mm  11 mm 1.220 inch  .551 inch  .433 inch. Despite this small size, high sensitivity is achieved by a mechanism that incorporates highefficiency polarized magnetic circuits along with our exclusive spring alignment method. With an minimum operating power of about 150 mW, nominal operating power of 240 mW, this relay can be directly driven by transistor or chip controllers. 2. High switching capability Strong against lamp inductive loads, maximum switching capacity has reached 3,040 VA (8A 380V AC). 3. High bre.

ST500A7.5 : .