Part Number | STB100NF04 |
Manufacturer | ST Microelectronics |
Title | N-CHANNEL POWER MOSFET |
Description | This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor show... |
Features |
Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT...
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File Size | 619.10KB |
Datasheet |
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STB100NF03L-03 : This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(1) ID(1) IDM(•) Ptot EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (conti.
STB100NF03L-03-1 : This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(1) ID(1) IDM(•) Ptot EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (conti.
STB100NF04-1 : This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS ORDERING INFORMATION SALES TYPE STP100NF04 STB100NF04T4 STB100NF04-1 MARKING P100NF04 B100NF04 B100NF04 PACKAGE TO-220 D2PAK I2PAK PACKAGING TUBE TAPE & REEL TUBE February 2002 1/15 DataSheet 4 .
STB100NF04L : This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS D2PAK TO-263 (Suffix “T4”) ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(*) ID IDM(•) Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (.
STB100NF04T4 : These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements. Order code STB100NF04T4 STP100NF04 AM01475v1_Tab Table 1: Device summary Mark.