| Part Number | BUL770 |
| Manufacturer | Bourns Electronic Solutions |
| Title | NPN SILICON POWER TRANSISTOR |
| Description | www.DataSheet4U.com BUL770 NPN SILICON POWER TRANSISTOR ● ● ● ● ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W hFE 7... |
| Features |
for tp = 300 µs, duty cycle ≤ 2%. SYMBOL VCES VCBO V CEO VEBO IC ICM ICM IB IBM Ptot Tj Tstg VALUE 700 700 400 9 2.5 6 8 1.5 2.5 50 -65 to +150 -65 to +150 UNIT V V V V A A A A A W °C °C
PRODUCT
DataSheet 4 U .com
INFORMATION
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JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to chan...
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| File Size | 259.11KB |
| Datasheet |
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BUL770 : BUL770 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK JULY 1991 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts up to 50 W hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions B C E TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 q Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) RATING Collector-emitter voltage (V BE = 0) Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Con.