| Part Number | STP11NM60FDFP |
| Manufacturer | ST Microelectronics |
| Title | N-CHANNEL Power MOSFET |
| Description | The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore stro... |
| Features |
D-1 MARKING P11NM60FD P11NM60FDFP B11NM60FD B11NM60FD PACKAGE TO-220 TO-220FP D2PAK I2PAK PACKAGING TUBE TUBE TAPE & REEL TUBE
February 2004
1/13
STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STP11NM60FD STB11NM60FD STB11NM60FD-1 VDS VDG...
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| File Size | 362.15KB |
| Datasheet |
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STP11NM60FDFP : isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 11 A IDM Pulse Drain Current 44 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal .