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1N6513


Part Number 1N6513
Manufacturer VMI
Title Spice Model
Description www.DataSheet4U.com Spice Model 1N6513 Electrical Characteristics and Maximum Ratings Part Working Number Reverse Voltage (Vrwm) Average Rectif...
Features apacitance Bulk junction potential Grading coefficient Energy-band gap Temperature coefficient Flicker-noise coefficient Flicker-noise exponent Coefficient for capacitance Diode breakdown voltage Diode breakdown current Value 5.0E-07 7.2 25 0.14 70 56.64 1.67 0.5 1.11 3 0 1 0.5 2200 100 Units Amps...

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1N6510 : These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see figure 1). An external TVS diode may be added between the positive supply line and ground to prevent over-voltage on the supply rail. They may also be used in fast switching coredriver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arra.

1N6510 : SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4207, REV. - Isolated Diode Array Applications:  High Frequency Data Lines  RS-323 & RS-432 Networks  LAN, Ethernet, I/O Ports  IEC61000-4 compatible for ESD / EFT / Surge Features:  Protects up to 8 I/O Ports  Isolated diodes eliminate crosstalk  High Density Packaging  High Breakdown Voltage; High Speed Switching ( 10 nsec)  Low Capacitance; Low Leakage  Hermetic Ceramic package  TX, TXV, S level screening available Maximum Ratings: All ratings are at 25 oC unless otherwise noted Characteristics Symbol Condition Reverse Breakdown Voltage VBR Per diode, Pulsed @ IR = 5 A Continuous Forward Current Pw=300 s +/- 50µs; .

1N6511 : These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see Figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching coredriver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arr.

1N6512 : Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information 1/ 1N651 __ __ __ │ │ └ Screening2/ │ │ __ = None ││ ││ ││ TX = TX Level TXV = TXV Level S = S Level │ └ Package │ __ = Axial │ SMS = Surface Mount Square Tab │ └ Voltage 2 = 1,500 V 6 = 4,000 V 3 = 2,000 V 7 = 5,000 V 4 = 2,500 V 8 = 7,500 V 5 = 3,000 V 9 = 10,000 V 1N6512 – 1N6519 Series 0.5 – 1.5 AMP 1,500 V – 10,000 V ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES:  Fast recovery: 70 nsec maximum  PIV to 10 KV  Hermetically sealed axial and surface mount p.

1N6512SMS : Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information 1/ 1N651 __ __ __ │ │ └ Screening2/ │ │ __ = None ││ ││ ││ TX = TX Level TXV = TXV Level S = S Level │ └ Package │ __ = Axial │ SMS = Surface Mount Square Tab │ └ Voltage 2 = 1,500 V 6 = 4,000 V 3 = 2,000 V 7 = 5,000 V 4 = 2,500 V 8 = 7,500 V 5 = 3,000 V 9 = 10,000 V 1N6512 – 1N6519 Series 0.5 – 1.5 AMP 1,500 V – 10,000 V ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES:  Fast recovery: 70 nsec maximum  PIV to 10 KV  Hermetically sealed axial and surface mount p.

1N6513 : 1N6513 2.0A 2.0kV 70nS Ultra-Fast Recovery High Voltage Silicon Rectifying Diode ----------------------------------------------------------------------------------------------------------------------------- ------- Introduce: Reference Shape: HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. Features: High reliability design. GPP chip. High frequency, super fast recovery. Conform to RoHS and SGS. Epoxy resin molded in vacuumHave anticorrosion in the surface. Applications: HVGT Name: Unit: (mm) High voltage mul.

1N6513 : Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information 1/ 1N651 __ __ __ │ │ └ Screening2/ │ │ __ = None ││ ││ ││ TX = TX Level TXV = TXV Level S = S Level │ └ Package │ __ = Axial │ SMS = Surface Mount Square Tab │ └ Voltage 2 = 1,500 V 6 = 4,000 V 3 = 2,000 V 7 = 5,000 V 4 = 2,500 V 8 = 7,500 V 5 = 3,000 V 9 = 10,000 V 1N6512 – 1N6519 Series 0.5 – 1.5 AMP 1,500 V – 10,000 V ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES:  Fast recovery: 70 nsec maximum  PIV to 10 KV  Hermetically sealed axial and surface mount p.

1N6513 : 1N6513, 1N6515, 1N6517, 1N6519 High-reliability discrete products and engineering services since 1977 0.5A – 2.0A RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  2,000V to 10,000V working reverse voltage  70ns recovery time  Operating temperature range = -65° to +175°C  Storage temperature range = -65 to +200°C ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified) Part Working Average Rectified Reverse Forward 1 Cycle Number Reverse Voltage (VRWM) Current (lo) Current @ VRWM (IR) Voltage .

1N6513SMS : Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information 1/ 1N651 __ __ __ │ │ └ Screening2/ │ │ __ = None ││ ││ ││ TX = TX Level TXV = TXV Level S = S Level │ └ Package │ __ = Axial │ SMS = Surface Mount Square Tab │ └ Voltage 2 = 1,500 V 6 = 4,000 V 3 = 2,000 V 7 = 5,000 V 4 = 2,500 V 8 = 7,500 V 5 = 3,000 V 9 = 10,000 V 1N6512 – 1N6519 Series 0.5 – 1.5 AMP 1,500 V – 10,000 V ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES:  Fast recovery: 70 nsec maximum  PIV to 10 KV  Hermetically sealed axial and surface mount p.

1N6513U : 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED 1N6513U 1N6515U 1N6517U JANTX Part Number JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Working Reverse Voltage (Vrwm) 55°C(1) Volts 1N6513U 1N6515U 1N6517U Amps Average Rectified Current (Io) 100°C(2) Amps 25°C µA Reverse Current @ Vrwm (Ir) 100°C µA 25°C Volts Forward Voltage 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time tp=8.3ms (3) (Ifsm) (Ifrm) (Trr) 25°C Amps 25°C Amps 25°C ns Thermal Impd. Junction Cap. @50VDC @1kHz (Cj) 25°C pF (Vf) 25°C Amps uJ-C 25°C °C / W 6 2000 3000 5000 5.0 3.5 2.0 3.3 2.3 1.3 1.0 1.0 1.0 25 25 25 3.5 6.0 8.

1N6514 : Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information 1/ 1N651 __ __ __ │ │ └ Screening2/ │ │ __ = None ││ ││ ││ TX = TX Level TXV = TXV Level S = S Level │ └ Package │ __ = Axial │ SMS = Surface Mount Square Tab │ └ Voltage 2 = 1,500 V 6 = 4,000 V 3 = 2,000 V 7 = 5,000 V 4 = 2,500 V 8 = 7,500 V 5 = 3,000 V 9 = 10,000 V 1N6512 – 1N6519 Series 0.5 – 1.5 AMP 1,500 V – 10,000 V ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES:  Fast recovery: 70 nsec maximum  PIV to 10 KV  Hermetically sealed axial and surface mount p.

1N6514SMS : Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information 1/ 1N651 __ __ __ │ │ └ Screening2/ │ │ __ = None ││ ││ ││ TX = TX Level TXV = TXV Level S = S Level │ └ Package │ __ = Axial │ SMS = Surface Mount Square Tab │ └ Voltage 2 = 1,500 V 6 = 4,000 V 3 = 2,000 V 7 = 5,000 V 4 = 2,500 V 8 = 7,500 V 5 = 3,000 V 9 = 10,000 V 1N6512 – 1N6519 Series 0.5 – 1.5 AMP 1,500 V – 10,000 V ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES:  Fast recovery: 70 nsec maximum  PIV to 10 KV  Hermetically sealed axial and surface mount p.

1N6515 : 2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/575 1N6513 1N6515 1N6517 1N6519 4 JANTX Part Number JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Working Reverse Voltage (Vrwm) Average Rectified Current (Io) Reverse Current @ Vrwm (Ir) Forward Voltage 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time tp=8.3ms (3) (Ifsm) (Ifsm) (Trr) 25°C Amps 25°C Amps 25°C ns Thermal Impedance Junction Cap. @50VDC @ 1kHZ (Cj) 25°C pF (Vf) 25°C Volts Amps uJ-L L=000 L=.125 L=.250 °C/W °C/W °C/W 55°C(1) 100°C(2) 25°C 100°C Volts 1N6513 1N6515 1N6517 1N6519 Amps Amps µA µA 2000 3000 5000 10000 2.0.

1N6515 : Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information 1/ 1N651 __ __ __ │ │ └ Screening2/ │ │ __ = None ││ ││ ││ TX = TX Level TXV = TXV Level S = S Level │ └ Package │ __ = Axial │ SMS = Surface Mount Square Tab │ └ Voltage 2 = 1,500 V 6 = 4,000 V 3 = 2,000 V 7 = 5,000 V 4 = 2,500 V 8 = 7,500 V 5 = 3,000 V 9 = 10,000 V 1N6512 – 1N6519 Series 0.5 – 1.5 AMP 1,500 V – 10,000 V ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES:  Fast recovery: 70 nsec maximum  PIV to 10 KV  Hermetically sealed axial and surface mount p.

1N6515 : www.DataSheet4U.com Spice Model 1N6515 Part Working Number Reverse Voltage (Vrwm) Average Rectified Current (Io) Reverse Current @ Vrwm (Ir) Forward Voltage (Vf) 25°C Volts Amps 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time tp=8.3ms (3) (Ifsm) (Ifrm) (Trr) 25°C Amps 25°C Amps 25°C ns Thermal Impedance J-L Junction Cap. @50VDC @ 1kHZ (Cj) 25°C pF 55°C(1) 100°C(2) 25°C 100°C Volts 1N6515 Amps Amps µA µA L=.000 L=.125 L=.250 °C/W °C/W °C/W 3000 1.50 1.00 1.0 25 6.0 1.50 60 10 70 3 6 12 20 .185 ±.030 (4.7 ±.76) A Par t 1N6513 1N6515 A .310(7.82) MAX. .250(7.6) MIN. .330(8.38) MAX. .270(6.85) MIN. .350(8.89) MAX. .290(7.37) MIN. .400(10.16) MAX..

1N6515 : 1N6513, 1N6515, 1N6517, 1N6519 High-reliability discrete products and engineering services since 1977 0.5A – 2.0A RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  2,000V to 10,000V working reverse voltage  70ns recovery time  Operating temperature range = -65° to +175°C  Storage temperature range = -65 to +200°C ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified) Part Working Average Rectified Reverse Forward 1 Cycle Number Reverse Voltage (VRWM) Current (lo) Current @ VRWM (IR) Voltage .




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