| Part Number | IXTH28N50Q |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | www.DataSheet4U.com Advanced Technical Information Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXTH 28... |
| Features |
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1.13/10 Nm/lb.in. 6 4 g g
IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on)
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Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100 ...
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| File Size | 199.65KB |
| Datasheet |
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IXTH28N50Q : isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 28 A IDM Drain Current-Single Plused 112 A PD Total Dissipation @TC=25℃ 400 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage .