Part Number | IRF511 |
Manufacturer | Harris Corporation |
Title | (IRF510 - IRF513) N-Channel Power MOSFETs |
Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed ... |
Features |
• 4.9A, and 5.6A, 80V and 100V • rDS(ON) = 0.54Ω and 0.74Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “G... |
Published | Apr 5, 2007 |
Datasheet | IRF511 PDF File |