| Part Number | 2SC4793 |
| Manufacturer | UTC |
| Title | NPN SILICON TRANSISTOR |
| Description | UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier ap... |
| Features |
*High transition frequency *Power amplifier applications *Driver stage amplifier applications
ORDERING INFORMATION Order Number Lead Free Halogen Free Package 2SC4793L-x-TF3-T 2SC4793G-x-TF3-T TO-220F Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing T... |
| File Size | 175.06KB |
| Datasheet |
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2SC4791 : 2SC4791 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC4791 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 20 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff c.
2SC4793 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SA1837 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 .
2SC4793 : TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications 2SC4793 Unit: mm • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1837 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC 230 V 230 V 5V 1A 0.1 A 2.0 W 20 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high tem.
2SC4793 : ·With TO-220F package ·Complement to type 2SA1837 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 230 230 5 1 0.1 20 W UNIT V V V A A www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon .
2SC4793AF : SEMICONDUCTOR 2SC4793AF High Frequency NPN Power Transistor 1A/230V/20W RoHS RoHS Nell High Power Products FEATURES High transition frequency: f T = 100MHz (typ.) Complementary to 2SA1837AF TO-220F package which can be installed to the heat sink with one screw BC E TO-220F (2SC4793AF) APPLICATIONS Power amplifier Driver stage amplifier C (2) B (1) NPN E (3) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL VCBO V CEO V EBO IC I CM (I cp ) IB PC TJ T STG PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current-continuous Peak collector current Base Current Collector power dissipation Junction temperature Storage t.
2SC4793D : TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package. / Features , 2SA1837D 。 High fT, complementary pair with 2SA1837D. / Applications 。 Power amplifier and driver stage amplifier applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions . http://www.fsbrec.com 1/6 2SC4793D Rev.E May.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current – Continuous Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperatu.
2SC4796 : 2SC4796 Silicon NPN Triple Diffused Application TV / character display horizontal deflection output TO–3PFM Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current www.DataSheet4U.com Symbol VCBO VCEO VEBO IC ic(surge) PC*1 Tj Tstg Rating 1700 900 6 6 16 50 150 –55 to +150 Unit V V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————.
2SC4796 : ·High Breakdown Voltage- : V(BR)CBO= 1700V(Min) ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 900 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 2.5 W 50 150 ℃ Tstg Storage Temperature Range -.
2SC4797 : 2SC4797 Silicon NPN Triple Diffused Application TV / character display horizontal deflection output TO–3PFM Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC ic(surge) PC*1 Tj Tstg Rating 1700 900 6 8 20 50 150 –55 to +150 Unit V V V A A W °C °C ——————————————————————————————————————————— ————————————————————.
2SC4799 : ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 6 A ICM Collector Current-Pulse 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 50 W 150 ℃ Tstg Storage Temperature .