MS1262

MS1261 : The MS1261 is a Class C 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This devices utilizes a gold metallized, emitter ballasted die geometry for superior reliability and infinite VSWR capability. www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 18 36 4.0 2.5 34 +200 -65 to +150 Unit V V V V A W ºC ºC T hermal Data RTH(J-C) Thermal Resistance Junction-case 8.75 ° C/W Advanced Power Technology reserves.

MS1263 : The MS1263 is a NPN silicon RF power transistor designed for 12.5-volt UHF amplifier applications operating to 512 MHz. The MS1263 has internal impedance matching for broadband operation and diffused emitter ballast for high load VSWR tolerance. www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PTOT T STG TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Storage Temperature Junction Temperature Value 36 16 4.0 3.4 0 37.5 -65 to +150 +200 Unit V V V A W °C °C Thermal Data Rθ JC Thermal Resistance Junction-case 4.6 ° C/W Advanced Power Technology reserves the right to change, w.