| Part Number | MS1261 |
| Manufacturer | Advanced Power Technology |
| Title | RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
| Description | The MS1261 is a Class C 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This devices utilizes a gold met... |
| Features |
175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1261 is a Class C 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This devices utilizes a gold metallized, emitter ballasted die ge...
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| File Size | 109.50KB |
| Datasheet |
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MS1262 : The MS1262 is a NPN silicon RF power transistor designed for 12.5 volt UHF amplifier applications operating to 512 MHz. The MS1262 has internal impedance matching for broadband operation and diffused emitter ballast for high load VSWR tolerance. www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PTOT T STG TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Storage Temperature Junction Temperature Value 36 16 4.0 3.4 0 37.5 -65 to +150 +200 Unit V V V A W °C °C Thermal Data Rθ JC Thermal Resistance Junction-case 4.6 ° C/W Advanced Power Technology reserves the right to change, w.
MS1263 : The MS1263 is a NPN silicon RF power transistor designed for 12.5-volt UHF amplifier applications operating to 512 MHz. The MS1263 has internal impedance matching for broadband operation and diffused emitter ballast for high load VSWR tolerance. www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PTOT T STG TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Storage Temperature Junction Temperature Value 36 16 4.0 3.4 0 37.5 -65 to +150 +200 Unit V V V A W °C °C Thermal Data Rθ JC Thermal Resistance Junction-case 4.6 ° C/W Advanced Power Technology reserves the right to change, w.