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FDB33N25

Fairchild Semiconductor
Part Number FDB33N25
Manufacturer Fairchild Semiconductor
Title N-Channel MOSFET
Description May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fa...
Features • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switch...
Published May 3, 2007
Datasheet PDF File FDB33N25 PDF File


FDB33N25
FDB33N25

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Features

• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability UniFET Description May 2006 TM These N-Channel enhancement mode power ...



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