High output power P1dB=32W (TYP.) @f=2.5 - 2.7GHz
High power gain GLP=12.0dB (TYP.) @f=2.5 - 2.7GHz
High power added efficiency P.A.E.=45% (TYP.) @f=2.5 - 2.7GHz
Low distortion [item -51]...
MGFS45V2527A PDF File
| Part Number | MGFS45V2527A |
| Manufacturer | Mitsubishi Electric |
| Title | power GaAs FET |
| Description | The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers. The hermetically ... |
| Features |
Class A operation Internally matched to 50(ohm) system High output power P1dB=32W (TYP.) @f=2.5 - 2.7GHz High power gain GLP=12.0dB (TYP.) @f=2.5 - 2.7GHz High power added efficiency P.A.E.=45% (TYP.) @f=2.5 - 2.7GHz Low distortion [item -51]... |
| Published | Jun 29, 2007 |
| Datasheet |
MGFS45V2527A PDF File
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