| Part Number | MGF0953P |
| Manufacturer | Mitsubishi Electric |
| Title | High-power GaAs FET |
| Description | The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES High output power Po=28.0dBm(TYP.) @f=2... |
| Features |
High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm High power gain Gp=16.5dB(TYP.) @f=2.15GHz High power added efficiency add=40%(TYP.) @f=2.15GHz,Pin=10dBm Plastic Mold Lead – less Package APPLICATION For L/S Band power amplifiers QU... |
| Published | Jul 4, 2007 |
| Datasheet |
 MGF0953P PDF File
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