MPSA12P

MPSA12 : MPSA12 CASE 29-02, STYLE 1 TO-92 (TO-226AA) DARLINGTON TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Total Device Dissipation (S T"a = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES v EBO PD TJ- Tstg Value 20 10 625 5.0 -55 to +150 Unit Vdc Vdc mW mW/°C °C Refer to 2N6426 for graphs. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol R0JA Max 200 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 100 /uAdc, B| = 0) Collector Cutoff Current (V CB = 15 Vdc, El = 0) Collector Cuto.

MPSA12 : MPSA12 Discrete POWER & Signal Technologies MPSA12 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 20 20 10 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are b.

MPSA12 : www.DataSheet4U.com MPSA12 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Emitter Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VEBO PD TJ, Tstg Value 20 10 625 5.0 −55 to +150 Unit Vdc Vdc mW mW/°C °C http://onsemi.com COLLECTOR 3 BASE 2 EMITTER 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Symbol RqJA Max 200 Unit °C/W MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not norm.

MPSA12 : MPSA12 Silicon NPN Transistor Darlington, General Purpose Amplifier, TO−92 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1, Note 2 unless otherwise specified) Collector−Emitter Voltage, VCES 20V Collector−Base Voltage, VCEO . 20V Emitter−Base Voltage, VEBO 10V Continuous Collector Current, IC . . .

MPSA12 : The CENTRAL SEMICONDUCTOR MPSA12 series devices are silicon NPN Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VEBO IC PD TJ, Tstg JA MPSA12 MPSA13 MPSA14 - 30 30 20 30 30 10 500 625 -65 to +150 200 ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=15V ICBO VCB=30V ICES VCE=15V IEBO VEB=10V BVCES IC=100μA VCE(SAT) IC=10m.