Part Number | NP100P06PDG |
Manufacturer | NEC |
Title | MOS FIELD EFFECT TRANSISTOR |
Description |
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. |
Features |
• Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(DC) = m100 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0... |
Published | Sep 19, 2007 |
Datasheet | NP100P06PDG PDF File |