Part Number | DFF4N60 |
Manufacturer | DnI |
Title | N-Channel MOSFET |
Description | This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-... |
Features |
High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate {
{ {
N-Channel MOSFET
2. Drain
BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A
3. Source
Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This N-channel enha...
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Published | Nov 3, 2007 |
Datasheet | DFF4N60 PDF File |