MS1257

MS125 : MS40 ... MS500 MS40 ... MS500 Surface Mount Si-Bridge-Rectifiers Si-Brückengleichrichter für die Oberflächenmontage Version 2007-01-16 1.5-0.1 0.2 Nominal current Nennstrom 5.1 +0.2 0.5 A 40...500 V 3 x 3 x 1.5mm Super-MicroDIL 0.04 g 2.5 6.5 +0.2 Alternating input voltage Eingangswechselspannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. 0.7 1.1 2.5 6.9 max 3-0.1 + 0.5 Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions - Maße [mm] Enlarged creepage and clearance, assembly on MiniDIL (TO-269AA) pad layouts Vergrößerte Luft- und Kriechstrecken, Mont.

MS1251 : The MS1251 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V, Class C VHF communications. This device utilizes diffused emitter resistors to achieve 20:1 VSWR capability at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ T STG Parameter Collector - Base Voltage Collector - Emitter Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 18 36 4.0 6.0 145 +200 -65 to +150 Unit V V V V A W °C °C Thermal Thermal Data RTH(J-C) Junction-Case Thermal Resistance 1.2 ° C/W Advanced Power Technology reserves the right to cha.

MS1252 : The MS1252 is especially designed for VHF large signal amplifier applications in industrial and commercial FM equipment operating up to 175 MHz. Ideally suited for marine radio applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 36 18 4 5 70 + 200 – 65 to + 150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 2.5 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website .

MS1253 : : The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO PDISS IC TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current Junction Temperature Storage Temperature Value 45 18 3.5 183 12.0 200 -65 to +150 Unit V V V W A °C °C Thermal Data RTH(J-C) Thermal Resistance Junction-case 1.05 ° C/W Advanced Power Technology reserves the right to change, without notice, the s.