Part Number | HY27US16121M |
Manufacturer | Hynix Semiconductor |
Title | (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
Description | of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interf... |
Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
NAND INTERFACE
- x8 or x16 bus width. - Multiplexed Address/ Data
www.DataSheet4U.com - Pinout compatib...
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Published | Jul 31, 2008 |
Datasheet | HY27US16121M PDF File |