TK63131S

TK63131B : 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TEST CIRCUIT 10 . TYPICAL CHARACTERISTICS 11 . PIN DESCRIPTION 12 . APPLICATIONS INFORMATION 13 . PACKAGE OUTLINE 14 . NOTES 15. OFFICES 2 2 2 2 2 3 3 4 7 9 26 27 32 35 35 GC3-J025E Page 1 TK631xxB/H/S CMOS LDO Regulator TK631xxB/H/S 1. DESCRIPTION The TK631xxB/H/S is a CMOS LDO regulator. The packages are the very small 4-bump flip chip, the small and thin SON2017-6, and the extremely versatile SOT235. The IC is designed for portable applications with space requirements, battery powered system and any electronic www.DataSheet4U.co.

TK63131H : 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TEST CIRCUIT 10 . TYPICAL CHARACTERISTICS 11 . PIN DESCRIPTION 12 . APPLICATIONS INFORMATION 13 . PACKAGE OUTLINE 14 . NOTES 15. OFFICES 2 2 2 2 2 3 3 4 7 9 26 27 32 35 35 GC3-J025E Page 1 TK631xxB/H/S CMOS LDO Regulator TK631xxB/H/S 1. DESCRIPTION The TK631xxB/H/S is a CMOS LDO regulator. The packages are the very small 4-bump flip chip, the small and thin SON2017-6, and the extremely versatile SOT235. The IC is designed for portable applications with space requirements, battery powered system and any electronic www.DataSheet4U.co.

TK60A08J1 : TK60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK60A08J1 Switching Regulator Application • • • • • • High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 75 75 ±20 60 240 45 498 60 2.

TK60D08J1 : TK60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK60D08J1 Switching Regulator Application • • • • • • High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 75 75 ±20 60 240 140 498 60 .

TK60F08K3 : TK60F08K3 MOSFETs Silicon N-channel MOS (U-MOS) TK60F08K3 1. Applications • • • • Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel tem.

TK60F10N1L : MOSFETs Silicon N-channel MOS (U-MOS-H) TK60F10N1L 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.14 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK60F10N1L TO-220SM(W) 1: Gate 2: Drain (Heatsink) 3: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-12 2020-06-24 Rev.5.0 TK60F10N1L 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteri.

TK60J25D : MOSFETs Silicon N-Channel MOS (π-MOS) TK60J25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.0285 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK60J25D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC).

TK60J25D : iscN-Channel MOSFET Transistor TK60J25D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 27mΩ (MAX.) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 70 A IDM Drain Current-Single Pulsed 210 A PD Total Dissipation @TC=25℃ 410 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS S.

TK60P03M1 : TK60P03M1 MOSFETs Silicon N-Channel MOS (U-MOS-H) TK60P03M1 1. Applications • • DC-DC Converters Desktop Computers 2. Features (1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 13 nC (typ.) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avala.