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2STW4466

Part Number 2STW4466
Manufacturer STMicroelectronics
Title High power NPN epitaxial planar bipolar transistor
Description The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain li...
Features
■ High breakdown voltage VCEO = www.DataSheet4U.com
■ Complementary to 2STW1693

■ 80 V Typical ft = 20 MHz Fully characterized at 125 oC Applications
■ 3 2 1 Audio power amplifier TO-247 Description The device is a NPN transistor manufactured in low voltage planar technology using base islan...

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2STW4468 : The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Internal schematic diagram Order codes Part Number 2STW4468 Marking 2STW4468 Package TO-247 Packing Tube February 2007 Rev 3 1/9 www.st.com 9 www.DataSheet4U.com 2STW4468 Electrical ratings Table 1. Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP 5ms) Tot.




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