| Part Number | IXFK110N06 |
| Manufacturer | IXYS Corporation |
| Title | HiPerFET Power MOSFETs |
| Description | www.DataSheet4U.comTM HiPerFET Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 ID25 RDS(on) 6 mW 7 mW 6 mW N-Channel Enhancement Mod... |
| Features |
• International standard packages • JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • • • • DC-DC co... |
| File Size | 191.08KB |
| Datasheet |
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IXFK110N07 : www.DataSheet4U.comTM HiPerFET Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 ID25 RDS(on) 6 mW 7 mW 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 60 V 110 A 70 V 105 A 70 V 110 A trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID130 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, die capability TC = 130°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C N07 N06 N07 N06 Maximum Ratings 70 60 70 60 ±20 ±30 110 76 600 100 30 2 5 500 -55 ... +1.