TIP136

TIP130 : ·With TO-220C package ·DARLINGTON ·Collector saturation voltage ·Complement to type TIP135/136/137 APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP130 VCBO Collector-base voltage TIP131 Open emitter TIP132 TIP130 VCEO Collector-emitter voltage TIP131 Open base TIP132 VEBO Emitter-base voltage Open collector IC Collector current-DC ICM Collector current-peak IB Base current-DC PC Collector power dissipation TC=25 Tj Junction temperature Tstg Storage temperature THERMAL CHARACTERISTI.

TIP130 : TIP130, TIP131, TIP132 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with TIP135, TIP136 and TIP137 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 4 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP130 Collector-base voltage (IE = 0) TIP131 TIP132 TIP130 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuo.

TIP130 : The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and TIP137. TO-220 3 1 2 www.DataSheet4U.com INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symb ol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T s tg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ase ≤ 25 oC Tamb ≤ 25 o C Storage T emper.

TIP130 : SYMBOL VCEO Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Operating And Storage Junction Temperature THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 1.78 62.5 ºC/W ºC/W VCBO VEBO IC ICM IB PD PD Tj , Tstg TIP130/135 60 60 TIP131/136 80 80 5.0 8.0 12 0.3 70 2.0 16 - 65 to +150 TIP132/137 100 100 UNIT V V V A A A W W mW/ºC ºC ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION ICEO VCE= Half Rated VCEO Collector Cut off Current Collector Cut .

TIP130 : ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to Type TIP135 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current- Continuous Collector Power Dissipation .

TIP130 : SEMICONDUCTORS NPN TIP130 – 131 – 132 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135/136/137 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Ratings Collector-Base Voltage (IE= 0) http://www.DataSheet4U.net/ Value TIP130 TIP131 TIP132 TIP130 TIP131 TIP132 60 80 100 60 80 100 5 8 12 0.3 70 2 150 -65 to +150 Unit V VCEO VEBO IC ICM IB PT tJ ts Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (1) Base Current Power Dissipation J.

TIP130 : SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC VEBO IC ICM IB PD PD Operating And Storage Junction Temperature Tj , Tstg THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) TIP130/135 60 60 TIP131/136 80 80 5.0 8.0 12 0.3 70 2.0 16 - 65 to +150 1.78 62.5 TIP132/137 100 100 UNIT V V V A A A W W mW/ºC ºC ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Cut off Current ICEO VCE= Ha.

TIP131 : ·With TO-220C package ·DARLINGTON ·Collector saturation voltage ·Complement to type TIP135/136/137 APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP130 VCBO Collector-base voltage TIP131 Open emitter TIP132 TIP130 VCEO Collector-emitter voltage TIP131 Open base TIP132 VEBO Emitter-base voltage Open collector IC Collector current-DC ICM Collector current-peak IB Base current-DC PC Collector power dissipation TC=25 Tj Junction temperature Tstg Storage temperature THERMAL CHARACTERISTI.

TIP131 : TIP130, TIP131, TIP132 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with TIP135, TIP136 and TIP137 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 4 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP130 Collector-base voltage (IE = 0) TIP131 TIP132 TIP130 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuo.

TIP131 : The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and TIP137. TO-220 3 1 2 www.DataSheet4U.com INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symb ol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T s tg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ase ≤ 25 oC Tamb ≤ 25 o C Storage T emper.

TIP131 : TIP131, TIP132 (NPN), TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) − TIP131 = 100 Vdc (Min) − TIP132, TIP137 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* MAXIMUM RATINGS Rating TIP132 Symbol TIP131 TIP137 Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Col.

TIP131 : SYMBOL VCEO Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Operating And Storage Junction Temperature THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 1.78 62.5 ºC/W ºC/W VCBO VEBO IC ICM IB PD PD Tj , Tstg TIP130/135 60 60 TIP131/136 80 80 5.0 8.0 12 0.3 70 2.0 16 - 65 to +150 TIP132/137 100 100 UNIT V V V A A A W W mW/ºC ºC ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION ICEO VCE= Half Rated VCEO Collector Cut off Current Collector Cut .

TIP131 : ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to Type TIP136 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current- Continuous Collector Power Dissipation .

TIP131 : SEMICONDUCTORS NPN TIP130 – 131 – 132 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135/136/137 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Ratings Collector-Base Voltage (IE= 0) http://www.DataSheet4U.net/ Value TIP130 TIP131 TIP132 TIP130 TIP131 TIP132 60 80 100 60 80 100 5 8 12 0.3 70 2 150 -65 to +150 Unit V VCEO VEBO IC ICM IB PT tJ ts Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (1) Base Current Power Dissipation J.

TIP131 : TIP131, 132, 136, 137 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137 • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres NPN TIP131 TIP132 PNP TIP136 TIP137 8.0 Ampere Darlington Complementary Silicon.

TIP131 : SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC VEBO IC ICM IB PD PD Operating And Storage Junction Temperature Tj , Tstg THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) TIP130/135 60 60 TIP131/136 80 80 5.0 8.0 12 0.3 70 2.0 16 - 65 to +150 1.78 62.5 TIP132/137 100 100 UNIT V V V A A A W W mW/ºC ºC ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Cut off Current ICEO VCE= Ha.

TIP131G : TIP131, TIP132 (NPN), TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) − TIP131 = 100 Vdc (Min) − TIP132, TIP137 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* MAXIMUM RATINGS Rating TIP132 Symbol TIP131 TIP137 Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Col.