| Part Number | 2SD1391 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For horizontal deflection out... |
| Features |
EO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
700
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=4.5A; IB=2A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A; IB=2A
1.3
V
VCB=750V; IE=0 ICBO Collector cu...
|
| File Size | 162.56KB |
| Datasheet |
|
2SD1390 : ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 1 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC≤90℃ TJ Junction Temperature 2.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1390 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark i.
2SD1391 : ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC≤90℃ TJ Junction Temperature 7 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon .
2SD1392 : www.DataSheet4U.com www.DataSheet4U.com .
2SD1393 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 0.8A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3 A 30 W 150 ℃ .
2SD1394 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 1.5A ·Low Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 5 A 30 W 150 ℃ -5.
2SD1395 : Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications · Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Package Dimensions unit:mm 2010C Features · High DC current gain. · Large current capacity · Wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. · High inductive load handling capability. Specifications 18.0 5.6 [2SD1395] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 0.8 123 2.55 2.55 2.7 14.0 0.4 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220A.
2SD1395 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2.5A ·Low Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8 A 40 W 150 ℃ -5.
2SD1396 : ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1396 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark.
2SD1396 : ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 2.5 10 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specificatio.
2SD1397 : ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 3.5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 10 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1397 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark.
2SD1397 : ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Color TV horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 3.5 10 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specifica.
2SD1398 : ·High Breakdown Voltage ·High Switching Speed ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 16 A 50 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ 2SD1398 isc website：www.iscsemi.com 1 isc & iscsemi is registered tradema.
2SD1398 : ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For TV and CRT display horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 5 120 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN P.
2SD1399 : ·High Breakdown Voltage : VCBO= 1500V (Min) ·High Switching Speed ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 16 A 50 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ 2SD1399 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Si.
2SD1399 : ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 6 16 50 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification S.